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| SUM60N06-15 Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 FEATURES rDS(on) (W) ID (A) 60 a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.015 @ VGS = 10 V APPLICATIONS D Automotive Applications Such As: - ABS - EPS - Motor Drives D Industrial D TO-263 G G DS S Top View Ordering Information: SUM60N06-15 SUM60N06-15-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C c TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 60 "20 60 35 100 35 61 100b 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient--PCB Mountc Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 72080 S-32406--Rev. B, 24-Nov-03 www.vishay.com Symbol RthJA RthJC Limit 40 1.4 Unit _C/W 1 SUM60N06-15 Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C VDS = 15 V, ID = 30 A 20 100 0.012 0.015 0.025 0.030 S W 60 2 4 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr Timec td(off) tf VDD = 30 V, RL = 0.5 W ID ^ 60 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 60 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 2100 300 125 30 11 8 10 12 20 10 15 20 30 15 ns 45 nC pF Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 30 A, VGS = 0 V IF = 60 A, di/dt = 100 A/ A A/ms 1.1 50 2 0.05 110 300 1.5 85 4 0.17 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72080 S-32406--Rev. B, 24-Nov-03 SUM60N06-15 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 thru 7 V 75 6V I D - Drain Current (A) 75 100 Transfer Characteristics I D - Drain Current (A) 50 5V 50 25 4V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 25 TC = 125_C 25_C -55_C 4 5 6 7 0 0 1 2 3 VGS - Gate-to-Source Voltage (V) Transconductance 120 100 g fs - Transconductance (S) 80 60 40 20 0 0 10 20 30 40 50 60 TC = -55_C 25_C 0.024 0.020 0.016 On-Resistance vs. Drain Current 125_C r DS(on) - On-Resistance ( W ) VGS = 10 V 0.012 0.008 0.004 0.000 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) 3000 2500 Capacitance 20 VGS = 30 V ID = 60 A Gate Charge V GS - Gate-to-Source Voltage (V) Ciss C - Capacitance (pF) 2000 1500 1000 Coss 500 0 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Document Number: 72080 S-32406--Rev. B, 24-Nov-03 Crss 16 12 8 4 0 0 10 20 30 40 50 60 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM60N06-15 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 30 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage r DS(on) - On-Resistance (W) (Normalized) 2.0 1.5 TJ = 150_C 10 TJ = 25_C 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 80 On-Resistance vs. Junction Temperature ID = 1 m A r DS(on) - On-Resistance (W) (Normalized) 100 I Dav (a) 75 10 IAV (A) @ TJ = 25_C 70 1 IAV (A) @ TJ = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 tin (Sec) 65 60 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72080 S-32406--Rev. B, 24-Nov-03 SUM60N06-15 Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Case Temperature 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TC - Ambient Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 100 I D - Drain Current (A) Safe Operating Area 1000 Limited by rDS(on) 10 ms 100 ms 10 1 ms 10 ms 1 dc, 100 ms TC = 25_C Single Pulse I D - Drain Current (A) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 Normalized Thermal Transient Impedance, Junction-to-Case 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 72080 S-32406--Rev. B, 24-Nov-03 www.vishay.com 5 |
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